Theoretical and experimental evaluation of the Integrated gate-commutated thyristor (IGCT) as a switch for Modular Multi Level Converters (MMC)

A study on Integrated gate-commutated thyristors (IGCT) di/dt limiting inductance and RCD-clamp reduction/suppression using plastic module silicon (Si) fast recovery diodes and silicon carbide (SiC) diodes, in Modular Multilevel Converters (MMC). This PhD contains:- Analysis of existing HVDC MMC Submodules.- Assessment of the interest of the IGCT in HVDC MMC Submodules and losses comparison with IGBTs, using MMC-specific figures-of-merit created in this thesis.- Double pulse test with fast recovery diode in plastic module to attempt to reduce and suppress the limiting di/dt inductor.- Packaging of High-Voltage High-Current SiC PiN diode dies, test with IGCT in the same setup to attempt to reduce and suppress the limiting di/dt inductor and analyze the specificities of the SiC diode in this setup.