Affordable Access

Access to the full text

Textured Barium Hexaferrite Films on Silicon Substrates with Aluminum Oxide and Titanium Oxide Barrier Layers

Authors
  • Kostishin, V. G.1
  • Mironovich, A. Yu.1
  • Timofeev, A. V.1
  • Shakirzyanov, R. I.1
  • Isaev, I. M.1
  • Sorokin, A. V.2
  • Ril’, A. I.3
  • 1 National University of Science & Technology “MISiS”, Moscow, 119049, Russia , Moscow (Russia)
  • 2 Moscow Plant “Sapfir”, Moscow, 117545, Russia , Moscow (Russia)
  • 3 Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow, 119991, Russia , Moscow (Russia)
Type
Published Article
Journal
Russian Journal of Inorganic Chemistry
Publisher
Pleiades Publishing
Publication Date
Dec 14, 2021
Volume
66
Issue
12
Pages
1802–1810
Identifiers
DOI: 10.1134/S0036023621120093
Source
Springer Nature
Keywords
Disciplines
  • Synthesis and Properties of Inorganic Compounds
License
Yellow

Abstract

AbstractThe possibility of synthesizing textured barium hexaferrite films on silicon wafers with Ti, Al2O3/Ti, or Al2O3/TiO2 barrier layers was studied. X-ray diffraction (XRD) showed that, after crystallization annealing, the hexaferrite phase with the (00l) preferred orientation was formed only when there was contact between BaFe12O19 and Al2O3. The hexaferrite microstructure in these samples, according to atomic force microscopy (AFM), is represented by rounded grains, which are typical of films where the hexagonal axis is perpendicular to the surface plane. Titanium in a BaFe12O19/Al2O3/Ti sample was partially oxidized during the synthesis. This process and the associated phase transformations in TiO2 are assumed to induce mechanical stress in the structure and, as a consequence, the formation of macroscopic defects (bulges). Complete pre-oxidation of the titanium film produced a textured BaFe12O19 structure without macroscopic defects.

Report this publication

Statistics

Seen <100 times