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Terahertz optical properties of thin doped contact layers in GaAs device structures

Authors
  • Bauer, T.
  • Kolb, J.S.
  • Mohler, E.
  • Roskos, H.G.
  • Köhler, K.
Publication Date
Jan 01, 2003
Source
Fraunhofer-ePrints
Keywords
Language
English
License
Unknown
External links

Abstract

We investigate the transmittance of thin doped GaAs layers in the terahertz (THz) frequency range taking into account multiple reflections. Our experimental and theoretical study aims at providing a guideline for designing the top-side contact layers for THz emitters and receivers with direct, antenna-free coupling of he radiation. It is shown that the surface conductivity of the contact layer is the determining factor for the THz transmittance.

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