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Terahertz emission by diffusion of carriers and metal-mask dipole inhibition of radiation.

Authors
  • Barnes, M E
  • McBryde, D
  • Daniell, G J
  • Whitworth, G
  • Chung, A L
  • Quarterman, A H
  • Wilcox, K G
  • Brewer, A
  • Beere, H E
  • Ritchie, D A
  • Apostolopoulos, V
Type
Published Article
Journal
Optics Express
Publisher
The Optical Society
Publication Date
Apr 09, 2012
Volume
20
Issue
8
Pages
8898–8906
Identifiers
DOI: 10.1364/OE.20.008898
PMID: 22513600
Source
Medline
License
Unknown

Abstract

Terahertz (THz) radiation can be generated by ultrafast photo-excitation of carriers in a semiconductor partly masked by a gold surface. A simulation of the effect taking into account the diffusion of carriers and the electric field shows that the total net current is approximately zero and cannot account for the THz radiation. Finite element modelling and analytic calculations indicate that the THz emission arises because the metal inhibits the radiation from part of the dipole population, thus creating an asymmetry and therefore a net current. Experimental investigations confirm the simulations and show that metal-mask dipole inhibition can be used to create THz emitters.

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