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Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density

  • x. l.), xl zhou (zhou
  • y. h.), yh chen (chen
  • j. q.), jq liu (liu
  • c. h.), ch jia (jia
  • g. y.), gy zhou (zhou
  • l.), ye xl (ye x.
  • bo), (xu
  • z. g.), zg wang (wang
Publication Date
Jan 01, 2010
Knowledge Repository of SEMI,CAS
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We have systematically studied the temperature dependent photoluminescence of a self-assembled In(Ga)As/GaAs quantum dot (QD) system with different areal densities from similar to 10(9) to similar to 10(11) cm(-2). Different carrier channels are revealed experimentally and confirmed theoretically via a modified carrier equation model considering a new carrier transfer channel, i.e. continuum states ( CS). The wetting layer is demonstrated to be the carrier quenching channel for the low-density QDs but the carrier transfer channel for the high-density QDs. In particular, for the InGaAs/GaAs QDs with a medium density of similar to 10(10) cm(-2), the CS is verified to be an additional carrier transfer channel in the low temperature regime of 10-60 K, which is studied in detail via our models. The possible carrier channels that act on different temperature regimes are further discussed, and it is demonstrated that density is not a crucial factor in determining the carrier lateral coupling strength.

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