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Temperature Dependence of G and D’ Phonons in Monolayer to Few-Layer Graphene with Vacancies

Authors
  • Yang, Mingming1
  • Wang, Longlong1
  • Qiao, Xiaofen2
  • Liu, Yi1
  • Liu, Yufan1
  • Shi, Yafang1
  • Wu, Hongli1
  • Liang, Baolai1
  • Li, Xiaoli1, 2
  • Zhao, Xiaohui1
  • 1 Hebei University, Baoding, 071002, People’s Republic of China , Baoding (China)
  • 2 Chinese Academy of Sciences, Beijing, 100083, People’s Republic of China , Beijing (China)
Type
Published Article
Journal
Nanoscale Research Letters
Publisher
Springer (Biomed Central Ltd.)
Publication Date
Sep 30, 2020
Volume
15
Issue
1
Identifiers
DOI: 10.1186/s11671-020-03414-w
Source
Springer Nature
Keywords
License
Green

Abstract

The defects into the hexagonal network of a sp2-hybridized carbon atom have been demonstrated to have a significant influence on intrinsic properties of graphene systems. In this paper, we presented a study of temperature-dependent Raman spectra of G peak and D’ band at low temperatures from 78 to 318 K in defective monolayer to few-layer graphene induced by ion C+ bombardment under the determination of vacancy uniformity. Defects lead to the increase of the negative temperature coefficient of G peak, with a value almost identical to that of D’ band. However, the variation of frequency and linewidth of G peak with layer number is contrary to D’ band. It derives from the related electron-phonon interaction in G and D’ phonon in the disorder-induced Raman scattering process. Our results are helpful to understand the mechanism of temperature-dependent phonons in graphene-based materials and provide valuable information on thermal properties of defects for the application of graphene-based devices.

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