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Synthesis and characterization of AlTiO films by mist-CVD

Authors
  • Zenji Yatabe1
  • Nishiyama, Koshi1
  • Tsuda, Takaaki1
  • Nishimura, Kazuki1
  • Nakamura, Yusui2
Type
Published Article
Journal
2019 Compound Semiconductor Week (CSW)
Publisher
IEEE
Publication Date
May 23, 2019
Identifiers
DOI: 10.1109/iciprm.2019.8819248
Source
MyScienceWork
License
White

Abstract

High-k dielectric aluminum titanium oxide (AlTiO, an alloy of Al 2 O 3 and TiO 2 ) films were obtained by mist chemical vapor deposition (mist-CVD), utilizing Al 2 O 3 and TiO 2 precursors. By X-ray fluorescence (XRF) investigations, atomic composition ratios of Al and Ti ratios in the Al x Ti y O films were verified. X-ray diffraction (XRD) revealed that the Al x Ti y O films deposited at 400 °C has amorphous-phase structure. It was shown that the refractive index and mass density of the Al x Ti y O films increases with increase in the Ti composition. Bandgap of the Al x Ti y O films was also estimated from X-ray photoelectron spectroscopy (XPS) and ultraviolet-visible spectroscopy. It was found that the bandgap of the Al x Ti y O films decrease with increase in the Ti composition. Moreover, the obtained refractive index, mass density and bandgap of Al 2 O 3 and TiO 2 films are all comparable to those reported for high-quality Al 2 O 3 and TiO 2 films deposited by ALD, thereby demonstrating the efficacy of using mist-CVD in synthesizing films having almost the same properties as those prepared by the more mature ALD.

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