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Synthesis of B-doped C3N4 nanosheets by secondary sintering for enhanced electrocatalytic nitrogen fixation performance

Authors
  • Wang, Xuhong1, 2
  • Huang, Jialei1, 2
  • Hu, Furong2
  • Chen, Jiawen2
  • Yao, Xiaxi2
  • 1 Changzhou University, Changzhou, 213164, People’s Republic of China , Changzhou (China)
  • 2 Changshu Institute of Technology, Changshu, 215500, People’s Republic of China , Changshu (China)
Type
Published Article
Journal
Journal of Nanoparticle Research
Publisher
Springer-Verlag
Publication Date
Mar 02, 2021
Volume
23
Issue
3
Identifiers
DOI: 10.1007/s11051-021-05177-6
Source
Springer Nature
Keywords
License
Yellow

Abstract

Electrochemical nitrogen fixation has received great attention in recent years due to its reliable and stable electrolytic efficiency. In this work, boron-doped carbon nitride with π-electron delocalization and vacancies was prepared by an in situ decomposition-thermal polymerization method. A series of characterizations were utilized to analyze the structure, morphology, and property. The results demonstrated that the secondary sintering and boron doping enhanced π-electron delocalization and induced the nitrogen vacancies of g-C3N4. The 0.24% boron-doped g-C3N4 electrocatalyst achieved the best ammonia yield (5.4 μg·h−1·mgcat−1) and the highest Faraday efficiency (14.1%) at −0.7 V vs reversible hydrogen electrode in 0.1 M Na2SO4. Furthermore, a feasible mechanism was proposed for the electrochemical nitrogen reduction process.Graphical abstract

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