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Study on variable capacitance diode of (p)nc-Si : H/(n)c-Si heterojunction

Authors
  • wei, ws
  • wang, tm
  • zhang, cx
  • gh, li
  • yx, li
Publication Date
Jan 01, 2003
Source
Knowledge Repository of SEMI,CAS
Keywords
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Abstract

Hydrogenated nanocrystalline silicon (nc-Si:H) layers of boron-doped increasing step by step was deposited on n-type crystalline silicon substrate using Plasma Enhanced Chemical Vapor Deposition (PECVD) system. After evaporating Ohm contact electrode on the side of substrate and on the side of nc-Si:H film, a structure of electrode/ (p)nc-Si:H/(n)c-Si/electrode was obtained. It is confirmed by electrical measurement such as I-V curve, C-V curve and DLTS that this is a variable capacitance diode. (C) 2003 Elsevier Science Ltd. All rights reserved.

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