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A study of indium incorporation in In-rich InGaN grown by MOVPE

Authors
  • guo, y
  • liu, xl
  • song, hp
  • yang, al
  • xq, xu
  • zheng, gl
  • wei, hy
  • yang, sy
  • zhu, qs
  • wang, zg
Publication Date
Jan 01, 2010
Source
Knowledge Repository of SEMI,CAS
Keywords
License
Unknown
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Abstract

InGaN/GaN heterostructures have been deposited onto (0 0 0 1) sapphire by our home-made low pressure MOVPE with different growth parameters. It has been noted that the indium incorporation depends by a complex way on a number of factors. In this work, the effect of substrate temperature, trimethylindium input flow and V/III ratio on the indium incorporation has been investigated. Finally, by optimizing the growth parameters, we made a series of single-phase InGaN samples with indium content from 10% up to 45%.

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