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磁控濺鍍技術製備還原氧化石墨烯之研究 / The Study of Fabrication for Reduced Graphene Oxide Deposited by Magnetron Sputtering Method

Authors
  • Lin, Yung-Che
Source
FirstTech Institutional Repository
Keywords
Language
Chinese
License
Unknown

Abstract

[[abstract]]石墨烯不論在光學特性、熱學特性、力學特性、電學特性都有很多的優異特性之外,也是目前最薄的材料,因此被譽為最有未來發展空間的新興材料。 自2004年至今都一直被各國的科學家極力投入研究以及研發,還是一直沒有適合大規模生產的製備方式,雖然有著許多的製備方式出現,但是都有著無法大面積生產、高成本、缺陷…等問題無法解決。目前最被為廣泛使用的製備方式為化學氣相沉積法及氧化還原法。 因此本論文研究方向將以氧化還原與化學氣相沉積法作為基礎進行研究,在實驗的過程中,利用反應式磁控濺鍍系統來製備還原氧化石墨烯,跳脫需要石墨氧化才能繼續進行氧化還原的觀念,並且研究如何降低石墨烯缺陷的大問題,以及免除轉印的方式即可得到完整石墨烯。 本論文研究主要是先以找出最佳的濺鍍生長時間,以及對應的最佳退火溫度,並且以固定持溫時間來做一個探討,再依序探討改變氣體流量、改變銅膜厚度及改變持溫時間對於還原氧化石墨烯之影響。在實驗最終也發現退火溫度在500℃下即可有效製備出還原氧化石墨烯,成功的降低缺陷、降低製程溫度以及基板轉移的問題。 / [[abstract]]Graphene both in optical properties thermal properties mechanical properties electrical properties than there are a lot of excellent properties is currently the thinnest material so as the most future development of new materials Since 2004 scientists have tried to put in so far have been countries in research and development still hasn’t been prepared the way of fabrication for mass production although there are many ways of preparation appear but it still can’t be solved about a large-scale production cost defects and other issues Untill now it has been largely applied in chemical vapor deposition method and redox Therefore this paper will research redox and chemical vapor deposition method as a basis for research in the course of the experiment by reactive magnetron sputtering system prepared by reducing graphene oxide to break through the need to continue the oxidation of graphite oxide reduction ideas and study how to reduce defects in graphene big problem and the way to get exemptions transferred intact graphene This paper is the first major study to identify the best time of sputtering growth and the corresponding optimal annealing temperature and do hold a fixed temperature and time to explore investigate and then sequentially changing the gas flow rate changing the copper thickness and change temperature holding time for reduction of graphene oxide influence In the final experiment also found at the annealing temperature to 500℃ effective reduction of graphene oxide prepared successful defect reduction lowering the temperature of the process and the problem of transfer of the substrate

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