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Study of Elastic Properties of SiC Films Synthesized on Si Substrates by the Method of Atomic Substitution

Authors
  • Grashchenko, A. S.1
  • Kukushkin, S. A.1, 2
  • Osipov, A. V.3
  • 1 Institute for Problems in Mechanical Engineering, Russian Academy of Sciences, St. Petersburg, 199178, Russia , St. Petersburg (Russia)
  • 2 Herzen State Pedagogical University, St. Petersburg, 191186, Russia , St. Petersburg (Russia)
  • 3 ITMO University, St. Petersburg, 197101, Russia , St. Petersburg (Russia)
Type
Published Article
Journal
Physics of the Solid State
Publisher
Pleiades Publishing
Publication Date
Dec 01, 2019
Volume
61
Issue
12
Pages
2310–2312
Identifiers
DOI: 10.1134/S106378341912014X
Source
Springer Nature
Keywords
License
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Abstract

AbstractThe elastic properties of nanoscale silicon carbide film grown on a silicon substrate by the method of atomic substitution were studied. The Young modulus of nanoscale silicon carbide was for the first time measured by nanoindentation method. The structural characteristics of silicon carbide film on silicon were studied by the optical profilometry and spectral ellipsometry; the roughness and thickness of film were m-easured.

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