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Structure and magnetic characteristics of nonpolar a-plane GaN : Mn films

Authors
  • Sun, LL
  • Yan, FW
  • Gao, HY
  • Zhang, HX
  • Zeng, YP
  • Wang, GH
  • Li, JM
Publication Date
Jan 01, 2008
Source
Knowledge Repository of SEMI,CAS
Keywords
License
Unknown
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Abstract

Diluted magnetic nonpolar GaN:Mn films have been fabricated by implanting Mn ions into unintentionally doped nonpolar a-plane (1 1 (2) over bar 0) GaN films with a subsequent rapid thermal annealing (RTA) process. The structure, morphology and magnetic characteristics of the samples were investigated by means of high-resolution x-ray diffraction (XRD), atomic force microscopy (AFM) and a superconducting quantum interference device (SQUID), respectively. The XRD analysis shows that the RTA process can effectively recover the crystal deterioration caused by the implantation process and that there is no obvious change in the lattice parameter for the as-annealed sample. The SQUID result indicates that the as-annealed sample shows ferromagnetic properties and magnetic anisotropy at room temperature.

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