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Structural properties of ne implanted GaN

Authors
  • majid, a
  • ali, a
  • zhu, jj
  • liu, w
  • gj, lu
  • zhang, lq
  • liu, zs
  • wang, h
  • zhao, dg
  • zhang, sm
  • jiang, ds
  • wang, yt
  • yang, h
  • israr, m
Publication Date
Jan 01, 2008
Source
Knowledge Repository of SEMI,CAS
Keywords
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Abstract

We report a study on the micro-structural changes in GaN due to neon ion implantation using the x-ray diffraction and Raman scattering techniques. An implantation dose of 10(14) cm(-2) was found unable to produce lattice deformation observable by Raman measurements. For higher doses of implantation several disorder activated Raman scattering centers were observed which corroborate the literature. A new dose dependent feature has been recorded at 1595 cm(-1) for higher implantation doses which is suggested to be the vibrational mode of microcavities produced in the lattice.

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