Structural properties of Ge-implanted SiO2 layers and related MOS memory effects

Authors

• Duguay, S
• Slaoui, A
• Grob, JJ
• Kanoun, M
• Burignat, Stéphane
• Souifi, A

Publication Date

Jan 01, 2005

Source

Ghent University Institutional Archive

Keywords

• Technology And Engineering
• Silicon
• Coulomb-Blockade
• Nanocrystals
• Thin
• Ion-Implantation
• Retention
• Memory
• Rbs
• Tem
• Germanium
• Ion Implantation
• Nanocrystal

Language

English

License

Unknown

External links

• Full record on biblio.ugent.be
  
• Full record on biblio.ugent.be
  
• Full record on dx.doi.org
  
• Full record on hdl.handle.net