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Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate

Authors
  • Seredin, P. V.
  • Goloshchapov, D. L.
  • Zolotukhin, D. S.
  • Lenshin, A. S.
  • Mizerov, A. M.
  • Arsentyev, I. N.
  • Leiste, Harald
  • Rinke, Monika
Type
Published Article
Journal
Semiconductors
Publisher
Pleiades Publishing
Publication Date
Aug 07, 2019
Volume
53
Issue
8
Pages
1120–1130
Identifiers
DOI: 10.1134/S1063782619080165
Source
Springer Nature
Keywords
License
Yellow

Abstract

AbstractThe possibility of synthesizing integrated GaN/por-Si heterostructures by plasma-assisted molecular beam epitaxy without an A1N/Si buffer layer is demonstrated. The beneficial effect of the high-temperature nitridation of a silicon substrate before GaN growth on the crystal quality of the GaN/Si layers is shown. It is established that, to obtain two-dimensional GaN layers on Si(111), it is reasonable to use compliant por-Si substrates and low-temperature GaN seed layers with a 3D morphology synthesized by plasma-assisted molecular beam epitaxy at relatively low substrate temperatures under stoichiometric conditions and upon enrichment with nitrogen. In this case, a self-assembled array of GaN seed nanocolumns with a fairly uniform diameter distribution forms on the por-Si substrate surface. The basic GaN layers, in turn, should be grown at a high temperature under stoichiometric conditions upon enrichment with gallium, upon which the coalescence of nucleated GaN nanocolumns and growth of a continuous two-dimensional GaN layer are observed. The use of compliant Si substrates is a relevant approach for forming GaN-based semiconductor device heterostructures by plasma-assisted molecular beam epitaxy.

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