Affordable Access

deepdyve-link
Publisher Website

Structural evolution of in situ boron-doped SiGe ultrathin film analyzed by multi-optical methods.

Authors
  • Chang, Feng-Ming1
  • Wu, Zong-Zhe
  • Chen, Yeh
  • Yen, Ting-Yu
  • Huang, Yu-Hsiang
  • Chong, Li-Yun
  • JangJian, Shiu-Ko
  • Lee, Fu-Ying
  • Chang, Yu-Ming
  • Lo, Kuang-Yao
  • 1 Department of Physics, National Cheng Kung University, Tainan 701, Taiwan. , (Taiwan)
Type
Published Article
Journal
Nanotechnology
Publisher
IOP Publishing
Publication Date
Mar 27, 2020
Volume
31
Issue
27
Pages
275702–275702
Identifiers
DOI: 10.1088/1361-6528/ab8422
PMID: 32217823
Source
Medline
Language
English
License
Unknown

Abstract

In situ boron (B)-doped SiGe (BSG) layer is extensively used in the source (S)/(D) drain of metal-oxide-semiconductor field-effect transistors. An unexpected structural evolution occurs in BSG during metallization and activation annealing during actual fabrication, which involves a correlated interaction between B and SiGe. Herein, the complicated phenomena of the structural evolution of BSG were analyzed by 325 nm micro-Raman spectroscopy, x-ray photoelectron spectroscopy (XPS), reflective second harmonic generation (RSHG), and synchrotron x-ray diffraction (XRD). Optical inspection was integrated into these processes to establish a multi-optical method. 325 nm micro-Raman spectroscopy was used to determine variations in Si-Si, Si-Ge, and Ge-Ge bonds in BSG. XPS exhibited the binding energy evolution of Ge3d during different annealing processes at varied Ge ratios and B concentrations. RSHG revealed the polar Si-B and Ge-B bonds formed during annealing. Synchrotron XRD provided the structure and strain changes of BSG. Secondary-ion mass spectrometer profiles provided the species distribution, which was used to examine the results of multi-optical method. Furthermore, double-layered BSG (DBSG) with different B concentrations were analyzed using the multi-optical method. Results revealed that Ge aggregated in the homogeneous interface of DBSG, and that B dopants in BSG served as carrier providers that strongly influenced the BSG structure. However, BSG with excessive B concentration was unstable and increased the B content (SiB3) through metallization. For BSG with a suitable B concentration, the formation of Si-B and Ge-B bonds suppressed the diffusion of Ge from SiGe, thereby reducing the possibility of Ge loss and further B pipe-up in the heavily doped S/D region.

Report this publication

Statistics

Seen <100 times