In this study, we focus on the growth of thin films of undoped and Sn doped vanadium dioxide thin films deposited by spray pyrolysis on glass substrates. All the samples were grown at a fixed temperature of 450°C for the time duration of 10 min, and the concentration of the precursor solution was fixed at 0.015M. Two different Sn doping concentrations (2% and 4%) were studied in term of optical transmission T and electrical resistance R change. VO 2 films doped with 2% of Sn showed transmission of 85% at a wavelength of 2000 nm and at a temperature of 25 °C, and it becomes less than 42% for the same wavelength at 90 °C. Electrical measurements as a function of the temperature of VO 2 films doped 2% of Sn show a difference of about two orders of magnitude between semi-conductor and metallic state.