Strong Fermi-Level Pinning at Metal/n-Si(001) Interface Ensured by Forming an Intact Schottky Contact with a Graphene Insertion Layer

Authors

• Yoon, Hoon Hahn
• Jung, Sungchul
• Choi, Gahyun
• Kim, Junhyung
• Jeon, Youngeun
• Kim, Yong Soo
• Jeong, Hu Young
• Kim, Kwanpyo
• Kwon, Soon-Yong
• Park, Kibog

Publication Date

Jan 11, 2017

Source

[email protected]

Keywords

• Diffusion Barrier
• Fermi-Level Pinning
• Graphene
• Intact Interface
• Internal Photoemission
• Schottky Barrier

Language

English

License

Unknown

External links

• Full record on pubs.acs.org
  
• Full record on scholarworks.unist.ac.kr
  
• Full record on dx.doi.org