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Stressed photoconductive detector for far-infrared space applications.

Authors
  • Wang, J Q
  • Richards, P L
  • Beeman, J W
  • Haller, E E
Type
Published Article
Journal
Applied optics
Publication Date
Nov 15, 1987
Volume
26
Issue
22
Pages
4767–4771
Identifiers
DOI: 10.1364/AO.26.004767
PMID: 20523443
Source
Medline
License
Unknown

Abstract

An optimized leaf-spring apparatus for applying uniaxial stress to a Ge:Ga far-infrared photoconductor has been designed and tested. This design has significant advantages for space applications which require high quantum efficiency and stable operation over long periods of time. The important features include adequate spring deflection with relatively small overall size, torque-free stress, easy measurement of applied stress, and a detector configuration with high responsivity. One-dimensional arrays of stressed photoconductors can be constructed using this design. A peak responsivity of 38 A/W is achieved in a detector with a cutoff wavelength of 200 microm, which was operated at a temperature of 2.0 K and a bias voltage equal to one half of the breakdown voltage.

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