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Strain Effects on the Optical Polarization Properties of R-Plane Wurtzite GaN

  • hao, gd
  • chen, yh
  • hao, yf
  • chinese, gd r hao
Publication Date
Jan 01, 2009
Knowledge Repository of SEMI,CAS
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Using the effective-mass Hamiltonian for an arbitrary direction wurtzite semiconductor on the basis of k.p theory, we investigate the strain effects on the transition energies and optical properties in the R-plane ([1012]-oriented plane) GaN. The results show that (1) the transition energies decrease with the biaxial strains changing from -0.5 to 0.5%; and (2) giant optical anisotropy appears in the R-plane which is significantly affected by the biaxial strains. We clarify the relation between the strains and the polarization properties. Finally, we discuss the application of these properties to the R-plane GaN based devices. (c) 2009 The Japan Society of Applied Physics

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