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Strain-Compensated InGaAs/InAlAs Quantum Cascade Detector of 4.5 mu m Operating at Room Temperature

Authors
  • ning), n kong (kong
  • jun-qi), jq liu (liu
  • lu), (li
  • feng-qi), fq liu (liu
  • li-jun), lj wang (wang
  • zhan-guo), zg wang (wang
Publication Date
Jan 01, 2010
Source
Knowledge Repository of SEMI,CAS
Keywords
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Abstract

We present a strain-compensated InP-based InGaAs/InAlAs photovoltaic quantum cascade detector grown by solid source molecular beam epitaxy. The detector is based on a vertical intersubband transition and electron transfer on a cascade of quantum levels which is designed to provide longitudinal optical phonon extraction stairs. By careful structure design and growth, the whole epilayer has a residual strain toward InP substrate of only -2.8 x 10(-4). A clear narrow band detection spectrum centered at 4.5 mu m has been observed above room temperature for a device with 200 x 200 mu m(2) square mesa.

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