Spin-torque switching window, thermal stability, and material parameters of MgO tunnel junctions

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Spin-torque switching window, thermal stability, and material parameters of MgO tunnel junctions

Authors
  • Thibaut Devolder
  • Laurence Bianchini1
  • K Miura
  • K Ito
  • Paul Crozat
  • Vincent Morin
  • Anne-rose Helmer
  • Claude Chappert
  • S Ikeda
  • H Ohno
Type
Published Article
Journal
Applied Physics Letters
Publisher
American Institute of Physics
Publication Date
Jan 25, 2011
Volume
98
Issue
16
Identifiers
DOI: 10.1063/1.3576937
Source
Polaris
Keywords
License
Green

Abstract

We study the use of in-plane magnetized free layers with artificially lowered effective magnetization, in the context of spin-torque random access memories with magnetic tunnel junctions. We determine the field-voltage window for direct overwrite switching and thermal stability. We relate them to the magnetic constants extracted from the telegraph noise and high frequency noise exhibited by the junctions under specific conditions.

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