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Spatial bandgap engineering along single alloy nanowires.

Authors
  • Gu, Fuxing
  • Yang, Zongyin
  • Yu, Huakang
  • Xu, Jinyou
  • Wang, Pan
  • Tong, Limin
  • Pan, Anlian
Type
Published Article
Journal
Journal of the American Chemical Society
Publisher
American Chemical Society
Publication Date
Feb 23, 2011
Volume
133
Issue
7
Pages
2037–2039
Identifiers
DOI: 10.1021/ja110092a
PMID: 21271702
Source
Medline
License
Unknown

Abstract

Bandgap engineering of semiconductor nanowires is important in designing nanoscale multifunctional optoelectronic devices. Here, we report a facile thermal evaporation method, and realize the spatial bandgap engineering in single CdS(1-x)Se(x) alloy nanowires. Along the length of these achieved nanowires, the composition can be continuously tuned from x = 0 (CdS) at one end to x = 1 (CdSe) at the other end, resulting in the corresponding bandgap (light emission wavelength) being modulated gradually from 2.44 eV (507 nm, green light) to 1.74 eV (710 nm, red light). In spite of the existing composition (crystal lattice) transition along the length, these multicolor nanowires still possess high-quality crystallization. These bandgap engineered nanowires will have promising applications in such as multicolor display and lighting, high-efficiency solar cells, ultrabroadly spectral detectors, and biotechnology.

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