SOI Processes For The Fabrication Of Novel Nano-Structures
- Authors
- Type
- Published Article
- Journal
- Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
- Publisher
- American Vacuum Society
- Publication Date
- Jan 17, 2001
- Volume
- 19
- Issue
- 5
- Pages
- 1995–1997
- Identifiers
- DOI: 10.1116/1.1404980
- Source
- LIBNA
- License
- Green
Abstract
A process to form a silicon on insulator (SOI) structure suspended in air was demonstrated. The structure provided electrical isolation while providing good thermal contact to the substrate. Selective epitaxial growth (SEG) of silicon was to provide robust, reliable mechanical and electrical contacts between the SOI layer and the substrate. The problem of uncontrollable lateral etching of the buried oxide to release the silicon diaphragms was solved by the process.
