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SnO2 thin films grown on m-plane sapphire substrate by mist chemical vapor deposition

Authors
  • Otabe, Tatsuya1
  • Sato, Takehide2
  • Matsushita, Junya2
  • Zenji Yatabe3
  • Sue, Koji2
  • Nagaoka, Shoji4
  • Nakamura, Yusui1
Type
Conference
Journal
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)
Publisher
IEEE
Publication Date
Jun 12, 2016
Identifiers
DOI: 10.1109/iciprm.2016.7528687
Source
MyScienceWork
License
White

Abstract

Tin dioxide (SnO 2 ) thin films, as a candidate for realizing next-generation power and optical devices, were grown on 2-inch diameter m-plane sapphire substrates by mist chemical vapor deposition at atmospheric pressure. The SnO 2 thin films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) in θ-2θ and ø scanning modes, and electron backscatter diffraction (EBSD). Although the SEM images showed the rough surface morphology, it was found from the XRD and EBSD measurements that SnO 2 films were epitaxially grown on the substrates under optimised growth condition. The XRD and EBSD results confirm epitaxial SnO 2 thin film growth at three typical areas on the substrate. It is likely that the single crystalline SnO 2 (001) thin film was formed across the 2-inch sapphire substrate.

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