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In situ-grown hexagonal silicon nanocrystals in silicon carbide-based films.

Authors
  • Kim, Tae-Youb
  • Huh, Chul
  • Park, Nae-Man
  • Choi, Cheol-Jong
  • Suemitsu, Maki
Type
Published Article
Journal
Nanoscale Research Letters
Publisher
Springer (Biomed Central Ltd.)
Publication Date
Jan 01, 2012
Volume
7
Issue
1
Pages
634–634
Identifiers
DOI: 10.1186/1556-276X-7-634
PMID: 23171576
Source
Medline
License
Unknown

Abstract

Silicon nanocrystals (Si-NCs) were grown in situ in carbide-based film using a plasma-enhanced chemical vapor deposition method. High-resolution transmission electron microscopy indicates that these nanocrystallites were embedded in an amorphous silicon carbide-based matrix. Electron diffraction pattern analyses revealed that the crystallites have a hexagonal-wurtzite silicon phase structure. The peak position of the photoluminescence can be controlled within a wavelength of 500 to 650 nm by adjusting the flow rate of the silane gas. We suggest that this phenomenon is attributed to the quantum confinement effect of hexagonal Si-NCs in silicon carbide-based film with a change in the sizes and emission states of the NCs.

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