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In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots

Authors
  • mf(李密锋), li
Publication Date
Jan 01, 2013
Source
Knowledge Repository of SEMI,CAS
Keywords
  • Inas Quantum Dots
  • Sacrificed Inas Layer
  • Molecular Beam Epitaxy
  • Reflection High-Energy Electron
  • 半导体材料
  • Atomic Layer Deposition
  • Atomic Layer Epitaxial Growth
  • Ale
  • Mle Growth
  • Molecular Layer Epitaxial Growth
  • Chemical Beam Epitaxial Growth
  • Cbe
  • Gas Source Mbe
  • Gsmbe
  • Metalorganic Molecular Beam Epitaxy
  • Mombe
  • Ommbe
  • Chemical Vapour Deposition
  • Apcvd
  • Chemical Vapor Deposition
  • Cvd
  • Laser Cvd
  • Laser-Induced Cvd
  • Lpcvd
  • Chemical Vapour Infiltration
  • Chemical Vapor Infiltration
  • Cvi
  • Crystal Growth From Vapour
  • Laser Deposition
  • Mocvd
  • Metalorganic Chemical Vapour Deposition
  • Movpe
  • Omcvd
  • Omvpe
  • Molecular Beam Epitaxial Growth
  • Mbe
  • Migration-Enhanced Epitaxy
  • Vapour Phase Epitaxial Growth
  • Hot Wall Epitaxial Growth
  • Vapor Phase Epitaxial Growth
  • Vpe
  • Cvi (Fabrication)
  • Ald
  • Molecular Beam Epitaxy
  • Coulomb-Bethe
  • Many-Body Expansion
License
Unknown
External links
  • Full record on ir.semi.ac.cn
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