In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots Authors mf(李密锋), li Publication Date Jan 01, 2013 Source Knowledge Repository of SEMI,CAS Keywords Inas Quantum Dots Sacrificed Inas Layer Molecular Beam Epitaxy Reflection High-Energy Electron 半导体材料 Atomic Layer Deposition Atomic Layer Epitaxial Growth Ale Mle Growth Molecular Layer Epitaxial Growth Chemical Beam Epitaxial Growth Cbe Gas Source Mbe Gsmbe Metalorganic Molecular Beam Epitaxy Mombe Ommbe Chemical Vapour Deposition Apcvd Chemical Vapor Deposition Cvd Laser Cvd Laser-Induced Cvd Lpcvd Chemical Vapour Infiltration Chemical Vapor Infiltration Cvi Crystal Growth From Vapour Laser Deposition Mocvd Metalorganic Chemical Vapour Deposition Movpe Omcvd Omvpe Molecular Beam Epitaxial Growth Mbe Migration-Enhanced Epitaxy Vapour Phase Epitaxial Growth Hot Wall Epitaxial Growth Vapor Phase Epitaxial Growth Vpe Cvi (Fabrication) Ald Molecular Beam Epitaxy Coulomb-Bethe Many-Body Expansion License Unknown External links Full record on ir.semi.ac.cn