In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots

Authors

• mf(李密锋), li

Publication Date

Jan 01, 2013

Source

Knowledge Repository of SEMI,CAS

Keywords

• Inas Quantum Dots
• Sacrificed Inas Layer
• Molecular Beam Epitaxy
• Reflection High-Energy Electron
• 半导体材料
• Atomic Layer Deposition
• Atomic Layer Epitaxial Growth
• Ale
• Mle Growth
• Molecular Layer Epitaxial Growth
• Chemical Beam Epitaxial Growth
• Cbe
• Gas Source Mbe
• Gsmbe
• Metalorganic Molecular Beam Epitaxy
• Mombe
• Ommbe
• Chemical Vapour Deposition
• Apcvd
• Chemical Vapor Deposition
• Cvd
• Laser Cvd
• Laser-Induced Cvd
• Lpcvd
• Chemical Vapour Infiltration
• Chemical Vapor Infiltration
• Cvi
• Crystal Growth From Vapour
• Laser Deposition
• Mocvd
• Metalorganic Chemical Vapour Deposition
• Movpe
• Omcvd
• Omvpe
• Molecular Beam Epitaxial Growth
• Mbe
• Migration-Enhanced Epitaxy
• Vapour Phase Epitaxial Growth
• Hot Wall Epitaxial Growth
• Vapor Phase Epitaxial Growth
• Vpe
• Cvi (Fabrication)
• Ald
• Molecular Beam Epitaxy
• Coulomb-Bethe
• Many-Body Expansion

License

Unknown

External links

• Full record on ir.semi.ac.cn