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Single electron spin and its coherence in Si quantum computer architecture

Authors
  • Calderon, M. J.
  • Koiller, Belita
  • Sarma, S. Das
Type
Published Article
Publication Date
Oct 03, 2006
Submission Date
Oct 03, 2006
Identifiers
DOI: 10.1103/PhysRevB.75.161304
arXiv ID: cond-mat/0610089
Source
arXiv
License
Unknown
External links

Abstract

The possibility of performing single spin measurements in Si-based quantum computers through electric field control of electrons bound to double donors near a barrier interface is assessed. We find that both the required electric fields and the tunneling times involved are probably too large for practical implementations. On the other hand, operations with double donors in their first excited state require smaller fields and faster tunneling times, and are therefore suitable for spin-to-charge conversion measurements. We also propose a measurement scheme that would render statistical (ensemble) estimates of the spin coherence at the Si/SiO2 interface.

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