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A SiC BJT-Based Negative Resistance Oscillator for High-Temperature Applications

Authors
  • Hussain, Muhammad Waqar
  • Elahipanah, Hossein
  • Zumbro, John E.
  • Rodriguez, Saul
  • Malm, B. Gunnar
  • Mantooth, H. Alan
  • Rusu, Ana
Publication Date
Jan 01, 2019
Identifiers
DOI: 10.1109/JEDS.2018.2889638
OAI: oai:DiVA.org:kth-245068
Source
DiVA - Academic Archive On-line
Keywords
Language
English
License
Green
External links

Abstract

This brief presents a 59.5 MHz negative resistanceoscillator for high-temperature operation. The oscillator employs an in-house 4H-SiC BJT, integrated with the requiredcircuit passives on a low-temperature co-fired ceramic substrate. Measurements show that the oscillator operates from room-temperature up to 400 C. The oscillator delivers an output◦power of 11.2 dBm into a 50 Ω load at 25 C, which decreases to 8.4 dBm at 400 C. The oscillation frequency varies by 3.3% in the entire temperature range. The oscillator is biased witha collector current of 35 mA from a 12 V supply and has amaximum DC power consumption of 431 mW. / <p>QC 20190311</p>

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