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Shunt-analysis of epitaxial silicon thin-film solar cells by lock-in thermography

Authors
  • Bau, S.
  • Huljic, D.M.
  • Isenberg, J.
Publication Date
Jan 01, 2002
Source
OpenGrey Repository
Keywords
Language
English
License
Unknown

Abstract

Lock-in thermography has been applied for shunt-analysis on epitaxial silicon thin-film solar cells. The solar cell material was made by epitaxial deposition of the base layer on highly doped monocrystalline (Czochralski) and multicrystalline silicon substrates in an APCVD-system. Solar cells were prepared in a laboratory-type and an industrial-type process. Characterization of the solar cells by infrared Lock-in thermography and microscopy revealed a clear correlation between shunts and epitaxial defects in case of the lab-type solar cells. Furthermore an increased concentration of shunts located under the emitter grid lines of the industrial-type solar cells compared to the lab-type solar cells was observed. The analysis by thermography thus gave insight into the quality of the epitaxial layers and into problems concerning a transfer of the solar cell process from laboratory to industrial scale manufacturing. (orig.) / Available from: <a href=http://www.ise.fhg.de/german/publications/index.html target=NewWindow>http://www.ise.fhg.de/german/publications/index.html</a> / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische Informationsbibliothek / SIGLE / DE / Germany

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