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Self-organized type-II In0.55Al0.45As/Al0.50Ga0.50As quantum dots realized on GaAs(311)A

Authors
  • liu, hy
  • zhou, w
  • ding, d
  • jiang, wh
  • xu, b
  • liang, jb
  • wang, zg
Publication Date
Jan 01, 2000
Source
Knowledge Repository of SEMI,CAS
Keywords
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Abstract

Self-organized In0.55Al0.45As/Al0.50Ga0.50As quantum dots are grown by the Stranski-Krastanow growth mode using molecular beam epitaxy on the GaAs(311)A substrate. The optical properties of type-II InAlAs/AlGaAs quantum dots have been demonstrated by the excitation power and temperature dependence of photoluminescence spectra. A simple model accounting for the size-dependent band gap of quantum dots is given to qualitatively understand the formation of type-II In0.55Al0.45As/Al0.50Ga0.50As quantum dots driven by the quantum-confinement-induced Gamma --> X transition. The results provide new insights into the band structure of InAlAs/AlGaAs quantum dots. (C) 2000 American Institute of Physics. [S0003-6951(00)00725-7].

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