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Schottky barrier heights of contact metals to p-type ZnSe

Authors
  • Koide, Yasuo1
  • Kawakami, T.1
  • Murakami, Masanori1
  • Teraguchi, N.2
  • Tomomura, Y.2
  • Suzuki, A.2
  • 1 Kyoto University, Department of Materials Science and Engineering, Kyoto, 606-01, Japan , Kyoto
  • 2 Sharp Corporation, Central Research Laboratories, Ichinomoto-cho, Tenri, Nara, 632, Japan , Nara
Type
Published Article
Journal
Journal of Electronic Materials
Publisher
Springer-Verlag
Publication Date
Jun 01, 1998
Volume
27
Issue
6
Pages
772–775
Identifiers
DOI: 10.1007/s11664-998-0052-0
Source
Springer Nature
Keywords
License
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Abstract

Schottky barrier heights (SBHs) of a variety of metals (In, Cd, Nb, Ti, W, Cu, Ag, Au, Ni, Pt, and Se) contacting to p-ZnSe grown by a molecular beam epitaxy method were determined by analyzing capacitance-voltage (C-V) and/or current density-voltage (J-V) curves. The SBH values of the Au and Ni contacts were determined from intersections of straight lines of the C−2-V curves to be 1.23 and 1.13 eV, respectively. The J-V calculations provided a large SBH value of 1.2 ± 0.1 eV for a variety of metals, indicating that the Fermi-level could be pinned at the contact interface. Reduction of the SBH values to a level lower than 0.4 eV and/or increase of doping concentrations to a level higher than 1020 cm−3 are essential to obtain an ohmic contact with contact resistivity of around 10−3 Ω·cm2.

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