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Room Temperature Ferromagnetism of Mn Implanted AlInN

Authors
  • majid, a
  • sharif, r
  • ali, a
  • zhu, jj
  • a chinese, r majid
Publication Date
Jan 01, 2009
Source
Knowledge Repository of SEMI,CAS
Keywords
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Abstract

Ferromagnetic properties of Mn-implanted wurtzite AlxIn1-xN/GaN thin films grown by metal organic chemical vapor deposition (MOCVD) were observed using a quantum design superconducting quantum interference device (SQUID) magnetometer. Hysteresis behavior with a reasonably high saturation magnetic moment at room temperature for all the samples was noted, Two optical thresholds were observed at 1.58 and 2.64 eV, which are attributed to internal transition (E-5 -> T-5(2)) of Mn3+ (d(4)) and hole emission from the neutral Mn acceptor level to the valence band respectively. Bound magnetic polaron formation is considered to be the origin of ferromagnetism in our samples. (c) 2009 The Japan Society of Applied Physics

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