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The Role of Nonidealities in the Scaling of MoS2 FETs

  • Verreck, Devin;
  • Arutchelvan, Goutham;
  • Lockhart de la Rosa, Cesar J; 75588;
  • Leonhardt, Alessandra; 110942;
  • Chiappe, Daniele;
  • Lu, Anh Khoa Augustin;
  • Pourtois, Geoffrey;
  • Matagne, Philippe;
  • Heyns, Marc M; 11193;
  • De Gendt, Stefan; 43564;
  • Mocuta, Anda;
  • Radu, Iuliana P;
Publication Date
Oct 01, 2018
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© 1963-2012 IEEE. 2-D material FETs hold the promise of excellent gate control, but the impact of nonidealities on their performance remains poorly understood. This is because of the need, so far, to use computationally intensive nonequilibrium Green's function (NEGF) simulations. Here, we therefore use a semiclassical model to investigate the role of nonidealities in the scaling of back-gated (BG) and top-gated (TG) monolayer MoS2 FETs. We verify the electrostatics and transport of the semiclassical model with density functional theory-based NEGF simulations and calibrate nonidealities, such as interface traps ( Dit) and Schottky contact barrier height (φSB) to experimental monolayer and bilayer MoS2 FETs. We find that among the nonidealities, Dit has the strongest subthreshold swing impact with 70 mV/dec obtainable in BG devices for a Dit of 5 × 1011 cm-2eV-1, an equivalent oxide thickness (EOT) of 1 nm, and a channel length (Lch) of 5 nm. For scaled EOT, φSB only strongly impacts ION for the TG case, as the overlapping gate thins the Schottky barriers in the BG case. We show in TG devices that a spacer of only 5 nm results in a 1000-fold drop in ION because of the nonidealities. We propose positive spacer oxide charge as a solution and show that a charge density of above 1013 cm-2 is required to fully recover the device performance. / status: published

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