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The role of metal/metal oxide/organic anode interfaces in efficiency and stability of bulk heterojunction organic photodetectors

Authors
  • Soultati, A.
  • Georgiadou, D.G.
  • Douvas, A.
  • Argitis, P.
  • Alexandropoulos, D.
  • Vainos, N.A.
  • Stathopoulos, N.A.
  • Papadimitropoulos, G.
  • Davazoglou, D.
  • Vasilopoulou, M.1, 2, 3, 4, 5, 6, 7, 8
  • 1 Institute of Microelectronics
  • 2 NCSR Demokritos
  • 3 Department of Chemical Engineering
  • 4 National Technical University of Athens
  • 5 Department of Materials Science
  • 6 University of Patras
  • 7 Department of Electronics
  • 8 Technological Educational Institute (TEI) of Piraeus
Type
Published Article
Journal
Microelectronic Engineering
Publisher
Elsevier
Publication Date
Jan 01, 2013
Accepted Date
Dec 05, 2013
Volume
117
Pages
13–17
Identifiers
DOI: 10.1016/j.mee.2013.12.008
Source
Elsevier
Keywords
License
Unknown

Abstract

We demonstrate a transition metal oxide based hole extraction layer approach to improve the efficiency, dark current and time stability of organic photodetectors (OPDs). A significant increase in device efficiency and over two orders of magnitude lower dark current at a bias voltage of −0.5V were obtained in OPDs based on the poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C71 butyric acid methyl ester (PC71BM) bulk heterojunctions (BHJ). This was achieved by introducing an under-stoichiometric tungsten oxide layer, after optimizing its thickness to 10nm, at the anode/organic layer interface instead of the commonly used poly(styrenesulfonate)-doped poly(ethylenedioxythiophene) (PEDOT:PSS). The increased efficiency and lower dark current were attributed to the formation of a favorable interfacial dipole and the reduction in the device series resistance, when PEDOT:PSS was replaced by these metal oxide layers.

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