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Reversible shape evolution of Ge islands on Si(001).

Authors
Type
Published Article
Journal
Physical review letters
Publication Date
Volume
87
Issue
25
Pages
256101–256101
Identifiers
PMID: 11736588
Source
Medline
License
Unknown

Abstract

The evolution of strained Ge/Si(001) islands during exposure to a Si flux was investigated by scanning tunneling microscopy. Dome islands display appreciable shape changes at Si coverages as low as 0.5 monolayer. With increasing coverage, they transform into [105]-faceted pyramids, and eventually into stepped mounds with steps parallel to the <110> directions. These morphological changes are induced by alloying and represent a complete reversal of those previously observed during Ge island growth. The results are interpreted with a simple model in which the equilibrium shape of an island mainly depends on its volume and composition.

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