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Resistive switching effects in single metallic tunneling junction with nanometer-scale gap

Authors
  • Mizukami, Takahiro
  • Miyato, Yuji
  • Kobayashi, Kei
  • Matsushige, Kazumi
  • Yamada, Hirofumi
Publication Date
Feb 01, 2011
Source
Kyoto University Research Information Repository
Keywords
Language
English
License
Unknown
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Abstract

We fabricated a single tunneling junction with a nanometer-scale gap between Pt electrodes. We found that the gap distance became smaller after a current sweep, which was presumably caused by the migration of the Pt atoms at the anode. The junction showed a reproducible negative differential resistance characteristic after reduction in the gap. The junction also showed resistive switching characteristics with a resistance ratio of over 100 by applying voltage of different waveforms. The tunneling area and gap distance for on/off-state were quantitatively estimated by fitting the measured characteristics to the simple model as 100 nm^2 and 0.8/1.2 nm, respectively.

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