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X-ray Detectors Based on Ga2O3 Microwires.

Authors
  • Zhang, Chongyang1
  • Dou, Wenjie1
  • Yang, Xun1
  • Zang, Huaping1
  • Chen, Yancheng1
  • Fan, Wei2
  • Wang, Shaoyi2
  • Zhou, Weimin2
  • Chen, Xuexia1, 3
  • Shan, Chongxin1
  • 1 Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China. , (China)
  • 2 Science and Technology on Plasma Physics Laboratory, Laser Fusion Research Center, China Academy of Engineering Physics, Mianyang 621900, China. , (China)
  • 3 School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China. , (China)
Type
Published Article
Journal
Materials
Publisher
MDPI AG
Publication Date
Jun 30, 2023
Volume
16
Issue
13
Identifiers
DOI: 10.3390/ma16134742
PMID: 37445057
Source
Medline
Keywords
Language
English
License
Unknown

Abstract

X-ray detectors have numerous applications in medical imaging, industrial inspection, and crystal structure analysis. Gallium oxide (Ga2O3) shows potential as a material for high-performance X-ray detectors due to its wide bandgap, relatively high mass attenuation coefficient, and resistance to radiation damage. In this study, we present Sn-doped Ga2O3 microwire detectors for solar-blind and X-ray detection. The developed detectors exhibit a switching ratio of 1.66 × 102 under X-ray irradiation and can operate stably from room temperature to 623 K, which is one of the highest reported operating temperatures for Ga2O3 X-ray detectors to date. These findings offer a promising new direction for the design of Ga2O3-based X-ray detectors.

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