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Residual metallic contamination of transferred chemical vapor deposited graphene.

Authors
  • Lupina, Grzegorz
  • Kitzmann, Julia
  • Costina, Ioan
  • Lukosius, Mindaugas
  • Wenger, Christian
  • Wolff, Andre
  • Vaziri, Sam
  • Östling, Mikael
  • Pasternak, Iwona
  • Krajewska, Aleksandra
  • Strupinski, Wlodek
  • Kataria, Satender
  • Gahoi, Amit
  • Lemme, Max C
  • Ruhl, Guenther
  • Zoth, Guenther
  • Luxenhofer, Oliver
  • Mehr, Wolfgang
Type
Published Article
Journal
ACS Nano
Publisher
American Chemical Society
Publication Date
May 26, 2015
Volume
9
Issue
5
Pages
4776–4785
Identifiers
DOI: 10.1021/acsnano.5b01261
PMID: 25853630
Source
Medline
Keywords
License
Unknown

Abstract

Integration of graphene with Si microelectronics is very appealing by offering a potentially broad range of new functionalities. New materials to be integrated with the Si platform must conform to stringent purity standards. Here, we investigate graphene layers grown on copper foils by chemical vapor deposition and transferred to silicon wafers by wet etching and electrochemical delamination methods with respect to residual submonolayer metallic contaminations. Regardless of the transfer method and associated cleaning scheme, time-of-flight secondary ion mass spectrometry and total reflection X-ray fluorescence measurements indicate that the graphene sheets are contaminated with residual metals (copper, iron) with a concentration exceeding 10(13) atoms/cm(2). These metal impurities appear to be partially mobile upon thermal treatment, as shown by depth profiling and reduction of the minority charge carrier diffusion length in the silicon substrate. As residual metallic impurities can significantly alter electronic and electrochemical properties of graphene and can severely impede the process of integration with silicon microelectronics, these results reveal that further progress in synthesis, handling, and cleaning of graphene is required to advance electronic and optoelectronic applications.

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