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Relationship between Detrapping of Electrons and Negative Gate Bias during Recovery Process in a-InGaZnO Thin Film Transistors

  • Kang, Yun-Seong
  • Lee, Yeol-Hyeong
  • Kim, Woo-Sic
  • Cho, Yong-Jung
  • Park, JeongKi
  • Kim, GeonTae
  • Kim, Ohyun
Publication Date
Feb 01, 2019
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The relationship between detrapping of electrons and negative gate bias in amorphous InGaZnO thin film transistors (a-IGZO TFTs) is investigated. In these devices, positive gate-bias stress (PBS) traps electrons at the gate insulator (GI) or at the interface between the channel and the GI, and creates acceptor-like states, which the authors speculate may be oxygen interstitials or zinc vacancies. In contrast, negative gate-bias stress (NBS) increases donor-like states, which are speculated as ionized oxygen vacancies, near the interface. When subsequent negative gate bias (SNB) is applied to a TFT after PBS, electrons are detrapped and donor-like states are increased simultaneously. Measurements with various SNB and PBS conditions suggests that SNB accelerates detrapping of electrons, and that those detrapped electrons interrupts the increase of donor-like states. / 1 / N

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