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Reduction of the Maximum Step Height on a Package Substrate by the Optimization of Slurry Chemical Additives

Authors
  • Jeong, Seonho1
  • Jeong, Haedo1
  • Jang, Soocheon2
  • Lee, Dasol1
  • Kim, Hyunjin1
  • 1 Pusan National University, Graduated School of Mechanical Engineering, 2, Busandaehak-ro, 63beon-gil, Geumjeong-gu, Busan, 46241, South Korea , Busan (South Korea)
  • 2 Pusan National University, G&P Technology, #304 MEMSNANO Center, 2, Busandaehak-ro, 63beon-gil, Geumjeong-gu, Busan, 46241, South Korea , Busan (South Korea)
Type
Published Article
Journal
International Journal of Precision Engineering and Manufacturing
Publisher
Korean Society for Precision Engineering
Publication Date
Apr 23, 2019
Volume
20
Issue
6
Pages
905–913
Identifiers
DOI: 10.1007/s12541-019-00116-x
Source
Springer Nature
Keywords
License
Yellow

Abstract

Package substrates have accompanied the development of the semiconductor industry. Advanced package substrate technology is being studied to carry many demanding functions. A re-distribution layer is the most important factor in developing this technology and achieving planarization of the top layer of lower substrate is important for this goal. The substrate is made of copper and an insulating polymer. Control of the pattern step height of copper and the polymer requires consideration of the mechanism of each material. In this experiment, since the polymer has little chemical polishing effect, the polishing rate of copper is controlled to reduce the step height by adjusting the chemical additives in the slurry. The chemical additives were an oxidizer, a complexing agent, and a corrosion inhibitor, which were applied to two different pattern sizes in order to compare the step height. The oxidizer and complexing agent promoted the chemical reaction of the copper, and the corrosion inhibitor suppressed the chemical reaction of the copper. In this experiment, it was confirmed that the larger the pattern size, the more chemical reaction was required. In the multi-sized pattern substrate, the overall planarization can be achieved by adjusting the maximum step height of each pattern.

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