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Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer

Authors
  • jian-feng), jf wang (wang
  • bao-shun), bs zhang (zhang
  • ji-cai), jc zhang (zhang
  • jian-jun), jj zhu (zhu
  • yu-tian), yt wang (wang
  • jun), j chen (chen
  • wei), w liu (liu
  • de-sheng), ds jiang (jiang
  • duan-zheng), dz yao (yao
  • hui), h yang (yang
Publication Date
Jan 01, 2006
Source
Knowledge Repository of SEMI,CAS
Keywords
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Abstract

GaN intermedial layers grown under different pressures are inserted between GaN epilayers and AlN/Si(111) substrates. In situ optical reflectivity measurements show that a transition from the three-dimensional (3D) mode to the 2D one occurs during the GaN epilayer growth when a higher growth pressure is used during the preceding GaN intermedial layer growth, and an improvement of the crystalline quality of GaN epilayer will be made. Combining the in situ reflectivity and transmission electron microscopy (TEM) measurements, it is suggested that the lateral growth at the transition of growth mode is favourable for bending of dislocation lines, thus reducing the density of threading dislocations in the epilayer.

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