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Reduced temperature sensitivity of the polarization properties of hydrogenated InGaAsN V-groove quantum wires

Authors
  • Felici, Marco
  • Polimeni, Antonio
  • Tartaglini, Elena
  • Notargiacomo, Andrea
  • De Luca, Marta
  • Carron, Romain
  • Fekete, Dan
  • Dwir, Benjamin
  • Rudra, Alok
  • Capizzi, Mario
  • Kapon, Eli
Publication Date
Jan 01, 2012
Source
Infoscience @ EPFL
License
Unknown
External links

Abstract

We investigated the effects of hydrogen irradiation on the degree of linear polarization, rho, of the light emitted by site-controlled, dilute-nitride InGaAsN V-groove quantum wires (QWRs). While in the as-grown sample the polarization of the QWR emission is highly sensitive to the increasing temperature (T), after sample hydrogenation the value of rho remains nearly unchanged (and similar to 25%) for T <= 220 K. This observation-potentially important for the development of devices based on the QWR polarization-points to a larger energy separation between hole subbands in the hydrogenated QWRs, due to the strain increase associated with the H-induced passivation of nitrogen. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4758685]

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