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Reduced Contact Resistance Between Metal and n-Ge by Insertion of ZnO with Argon Plasma Treatment

Authors
  • Zhang, Yi1
  • Han, Genquan1
  • Wu, Hao2
  • Wang, Xiao1
  • Liu, Yan1
  • Zhang, Jincheng1
  • Liu, Huan1
  • Zheng, Haihua2
  • Chen, Xue2
  • Liu, Chang2
  • Hao, Yue1
  • 1 Xidian University, State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xi’an, 710071, People’s Republic of China , Xi’an (China)
  • 2 Wuhan University, Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan, 430072, People’s Republic of China , Wuhan (China)
Type
Published Article
Journal
Nanoscale Research Letters
Publisher
Springer (Biomed Central Ltd.)
Publication Date
Aug 15, 2018
Volume
13
Issue
1
Identifiers
DOI: 10.1186/s11671-018-2650-y
Source
Springer Nature
Keywords
License
Green

Abstract

We investigate the metal-insulator-semiconductor contacts on n-Ge utilizing a ZnO interfacial layer (IL) to overcome the Fermi-level pinning (FLP) effect at metal/Ge interface and reduce the barrier height for electrons. A small conduction band offset of 0.22 eV at the interface between ZnO and n-Ge is obtained, and the ZnO IL leads to the significant reduced contact resistance (Rc) in metal/ZnO/n-Ge compared to the control device without ZnO, due to the elimination of FLP. It is observed that the argon (Ar) plasma treatment of ZnO can further improve the Rc characteristics in Al/ZnO/n-Ge device, which is due to that Ar plasma treatment increases the concentration of oxygen vacancy Vo, acting as n-type dopants in ZnO. The ohmic contact is demonstrated in the Al/ZnO/n-Ge with a dopant concentration of 3 × 1016 cm−3 in Ge. On the heavily doped n+-Ge with a phosphor ion (P+) implantation, a specific contact resistivity of 2.86 × 10− 5 Ω cm2 is achieved in Al/ZnO/n+-Ge with Ar plasma treatment.

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