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RECRYSTALLIZATION, IMPURITY MIGRATION AND OPTICAL ACTIVATION OF YB-IMPLANTED SILICON INDUCED BY RAPID THERMAL ANNEALING

Authors
  • tb, xu
  • zhu, pr
  • dq, li
  • ren, tq
  • sun, hl
  • wan, sk
  • acad, xu tb r chinese
Publication Date
Jan 01, 1994
Source
Knowledge Repository of SEMI,CAS
Keywords
License
Unknown
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Abstract

The rapid thermal annealing temperature dependence of the recrystallization, Yb migration and its optical activation were studied for Yb-implanted silicon. For the annealing regime 800-1000-degrees-C, the Yb segregates both at the crystal/amorphous interface and at the surface, which is different from the usual segregation of Er at the crystal/amorphous interface, and the efficiency of optical activation also increases with annealing temperature. However, the amorphous layer regrows completely and no photoluminescence is observed after the annealing at 1200-degrees-C.

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