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Recombination property of nitrogen-acceptor-bound states in ZnO

Authors
  • yang, xd
  • zy, xu
  • sun, z
  • sun, bq
  • ding, l
  • wang, fz
  • zz, ye
Publication Date
Jan 01, 2006
Source
Knowledge Repository of SEMI,CAS
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Abstract

The recombination property of nitrogen (N)-related acceptor-bound states in ZnO has been investigated by photoluminescence (PL), time-resolved PL, and selective PL. Several possible recombination processes were discussed by analyzing the relaxation and recombination properties under large Coulomb interaction. It is strongly suggested that bound exciton emission dominates the recombination process related to the N acceptor. The recombination lifetime is 750 ps and the binding energy is 67 meV for N-acceptor-bound exciton at low temperature. (c) 2006 American Institute of Physics.

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