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Raman scattering and photoluminescence of ZnSxTe1-x mixed crystals

Authors
  • liu, nz
  • gh, li
  • zhu, zm
  • han, hx
  • wang, zp
  • wk, ge
  • sou, ik
Publication Date
Jan 01, 1998
Source
Knowledge Repository of SEMI,CAS
Keywords
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Unknown
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Abstract

We have investigated the Raman scattering and the photoluminescence (PL) of ZnSxTe1-x mixed crystals grown by MBE, covering the entire composition range (0 less than or equal to x < 1). The results of Raman studies show that the ZnSxTe1-x mixed crystals display two-mode behaviour. In addition, photoluminescence spectra obtained in backscattering and edge-emission geometries, reflectivity spectra and the: temperature dependence of the photoluminescence of ZnSxTe1-x have been employed to find out the origin of PL emissions in ZnSxTe1-x with different x values. The results indicate that emission bands, for the samples with small x values, can be related to the band gap transitions or a shallow-level emission centre, while as x approaches 1, they are designated to strong radiative recombination of Te isoelectronic centres (IECs).

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