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Radiation Hardening of Digital Color CMOS Camera-on-a-Chip Building Blocks for Multi-MGy Total Ionizing Dose Environments

Authors
  • Goiffon, Vincent
  • Rolando, Sébastien
  • Corbière, Franck
  • Rizzolo, Serena
  • Chabane, Aziouz
  • Girard, Sylvain
  • Baer, Jérémy
  • Estribeau, Magali
  • Magnan, Pierre
  • Paillet, Philippe
  • Van Uffelen, Marco
  • Mont Casellas, Laura
  • Scott, Robin
  • Gaillardin, Marc
  • Marcandella, Claude
  • Marcelot, Olivier
  • Allanche, Timothé
Publication Date
Jan 01, 2017
Identifiers
DOI: 10.1109/TNS.2016.2636566
OAI: oai:oatao.univ-toulouse.fr:17619
Source
Open Archive Toulouse Archive Ouverte
Keywords
Language
English
License
Green
External links

Abstract

The Total Ionizing Dose (TID) hardness of digital color Camera-on-a-Chip (CoC) building blocks is explored in the Multi-MGy range using 60Co gamma-ray irradiations. The performances of the following CoC subcomponents are studied: radiation hardened (RH) pixel and photodiode designs, RH readout chain, Color Filter Arrays (CFA) and column RH Analog-to-Digital Converters (ADC). Several radiation hardness improvements are reported (on the readout chain and on dark current). CFAs and ADCs degradations appear to be very weak at the maximum TID of 6 MGy(SiO2), 600 Mrad. In the end, this study demonstrates the feasibility of a MGy rad-hard CMOS color digital camera-on-a-chip, illustrated by a color image captured after 6 MGy(SiO2) with no obvious degradation. An original dark current reduction mechanism in irradiated CMOS Image Sensors is also reported and discussed.

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