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Properties and turning of intraband optical absorption in InxGa1-xAs/GaAs self-assembled quantum dot superlattice

Authors
  • liu, b
  • zhuang, qd
  • yoon, sf
  • dai, jh
  • kong, my
  • zeng, yp
  • jm, li
  • lin, ly
  • zhang, hj
Publication Date
Jan 01, 2001
Source
Knowledge Repository of SEMI,CAS
Keywords
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Unknown
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Abstract

We investigated properties of intraband absorption in In-x Ga1-xAs quantum dots (QDs) superlattice. Energy levels in conduction band in QDs were calculated for a cone-shaped quantum dot associated with coupling between QDs in the framework of the effective-mass envelope-function theory. Theoretical results demonstrated that energy levels in conduction band were greatly affected by the vertical coupling between quantum dots, which can be used to modify transition wavelength by adjusting the space layer thickness. Intraband transition is really sensitive to normal incidence and the absorption peak intensity is dependent on the polarization. A satisfying agreement is found between theoretical and experimental values. This result opens up prospects for the fabrication of QDs infrared detectors, which work at atmospheric windows.

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